—Semiconductor Stacks “A new method for growing large pieces of GaAs could boost the material’s use in electronic devices” A new method for growing large, high-quality pieces of compound semiconductors such as gallium arsenide could help boost the use of these materials in photovoltaic and optoelectronic devices (Nature 2010, 465, 329). Compound semiconductors easily outperform silicon semiconductors, thanks to their direct band gaps and high electron mobilities. But growing large, high-quality wafers of GaAs and related materials has proven costly. To address this problem, a team led by John A. Rogers of the University of Illinois, Urbana-Champaign; Ungyu Paik of Hanyang University, in South Korea; and Matthew Meitl of photovoltaics developer Semprius, in Durham, N.C., developed a fabrication method in which multiple layers of GaAs or AlGaAs are grown via metal organic chemical vapor deposition in between separating layers of AlAs.
by Bethany Halford |
May 24, 2010